P9.3 - Sensors with SOI FET Primary Transducer and Frequency Output
- Event
- AMA Conferences 2015
2015-05-19 - 2015-05-21
Nürnberg, Germany - Band
- Proceedings SENSOR 2015
- Chapter
- P9 - Electronics
- Author(s)
- A. Leonov, A. Malykh, V. Mordkovich - Institute of microelectronics technology and high purity materials RAS, Chernogolovka, Moscow region (Russia), M. Pavlyuk - JSC “ICC Milandr”, Moscow, Zelenograd (Russia)
- Pages
- 864 - 867
- DOI
- 10.5162/sensor2015/P9.3
- ISBN
- 978-3-9813484-8-4
- Price
- free
Abstract
It is shown, that dual-gate SOI FET with built-in channel and MISIM control system with two additional ohmic contacts to channel’s lateral side that can be used as a sensing element of external actions microelectronic transducer with frequency output (magnetic field, temperature and ionizing radiation). Transducer can be formed by means of using a sensing element in autogenerator circuits of different types. Also self-oscillation of transistor channel current can be used, appearing at the area of electrons avalanche effect of volt-ampere characteristics. Electric mode changes of sensing element and MISIM system gates potential allows controlling frequency rate value of the transducer.