2.4 - Electro-Optical Properties of InAs/GaSb Superlattice Infrared Photodiodes for Bispectral Detection
- Event
- AMA Conferences 2013
2013-05-14 - 2013-05-16
Nürnberg - Band
- Proceedings IRS² 2013
- Chapter
- I2 - Recent Developments in IR Industry
- Author(s)
- A. Wörl, F. Rutz, R. Rehm, J. Masur, P. Kleinow, J. Schmitz, J. Niemasz, W. Luppold, T. Stadelmann, M. Walther - Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg (Germany), T. Simon, R. Scheibner, J. Ziegler - AIM Infrarot-Module GmbH, Heilbronn (Germany)
- Pages
- 37 - 42
- DOI
- 10.5162/irs2013/i2.4
- ISBN
- 978-3-9813484-3-9
- Price
- free
Abstract
InAs/GaSb short-period superlattices have proven their large potential for high-performance focal plane array infrared detectors. They are fabricated as monospectral and bispectral infrared detectors for a wavelength range between 3-30 !m with very high responsivity and thus comparable to state-ofthe-art CdHgTe and InSb detectors. Dual-color, mid-wavelength infrared InAs/GaSb superlattice camera systems offer simultaneous and spatially coincident detection on a millisecond time scale in both spectral channels between 3-4 !m and 4-5 !m. Thus, these cameras are very sensitive to the spectral signature of carbon dioxide at approximately 4.3 !m and can be used for remote imaging of
CO2. In a molecular beam epitaxy based process, eleven 288 × 384 dual-color detector arrays are fabricated on 3” GaSb substrates. Very homogeneous detector arrays with an excellent noise equivalent temperature difference have been realized. This article presents the InAs/GaSb type-II superlattice dual-color concept, its results, and delivers insights into a range of test methodologies which ensure that the basic requirements for achieving high detector performance are fulfilled.