4.1.1 New pathways for pressure and force sensor systems – Strain sensing with nanogranular metals
- Event
- 16. GMA/ITG-Fachtagung Sensoren und Messsysteme 2012
2012-05-22 - 2012-05-23
Nürnberg, Germany - Chapter
- 4.1 Mechanische Sensoren: Dehnungssensoren
- Author(s)
- C. Schwalb, A. Kaya - NanoScale Systems, Nanoss GmbH, Darmstadt, M. Huth - Universität Frankfurt, F. Völkle - Hochschule RheinMain, Rüsselsheim
- Pages
- 406 - 415
- DOI
- 10.5162/sensoren2012/4.1.1
- ISBN
- 978-3-9813484-0-8
- Price
- free
Abstract
This paper introduces a novel methodology for the fabrication of threedimensional (3D) strain sensing elements for micro- and nanoelectromechanical applications based on the tunneling effect in nanogranular metals. The nanogranular tunneling resistors (NTR) are prepared by the direct writing technique of focused electron-beam-induced deposition, a process which enables the preparation of sensor structures well below 20 nm on a great variety of
substrates and different materials. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element. The sensitivity and the resistance can be altered either by the thickness of the deposits, by post electron-beam irradiation, or by passivation with an amorphous silicon layer. We demonstrate applications for the NTR sensor elements in the field of cantilever- and membrane-based sensor systems and discuss possible future applications in MEMS/NEMS-technology.