1.2 - Line Sensor for Fast, Time-Resolved Spectroscopy Measurements
- AMA Conferences 2013
2013-05-14 - 2013-05-16
- Proceedings OPTO 2013
- O1 - New Components for Detection and Sensing
- E. Poklonskaya, D. Durini, M. Jung, O. Schrey, W. Brockherde - Fraunhofer IMS, Duisburg (Germany)
- 17 - 21
In this work a novel CMOS line sensor based on the lateral drift-field photodetector (LDPD)  pixel approach is presented. The proposed pixel structure features the photoactive area of 200 m ×10 m fulfilling the application requirements . A specially designed n-well within the LDPD provides the fast and efficient transfer of the generated carries from the photoactive area into each of the sense or drain nodes. The grounded p+ layer localized on the surface of the LDPD n-well reduces the dark current generated by Schockley-Read-Hall recombination/generation centers located on the silicon surface. The UV-enhanced silicon-nitride based passivation layer guarantees the photodiode (PD) sensitivity down to 220 nm wavelength range. The presented line sensor LDPD pixel is to be employed in optical emission spectroscopy applications.