P1.5.1 On the the theory of gas sensors made of nanotubes
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- P1.5 FET-based Sensors
- Author(s)
- V. Aroutiounian, B. Mnatsakanyan - Yerevan State University (Armenia)
- Pages
- 1025 - 1027
- DOI
- 10.5162/IMCS2012/P1.5.1
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
This paper presents a mathematical model of gas sensors made of carbon nanotubes. A resistive sensitivity of nanotubes due to charge concentration changes and physical structure of nanotube was considered. The numerical evaluation of sensitivity is also valid for one dimensional structures (1DST). Also, we have carried out a mathematical model of back-gate carbon nanotube field-effect transistor (CNFET). This model is valid for CNFET with wide ranges of diameters and for CNFET with semiconducting carbon-nanotube (CNT) conducting channel. We have considered the quantum confinement effects on both circumferential and axial directions and the acoustical/optical scattering, in this model. In order to describe the current-voltage (I-V) characteristics of gas sensor we combine these two models: the model of nanotube and back-gate (CNFET). The modeling was carried out with a GNU Octave math package.