P1.7.6 CO Gas Sensing Using Ga Doping ZnO Nanorods by Hydrothermal Method: Effects of Defects-Controlled
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- P1.7 Nanostructured Metal Oxide-based Sensors
- Author(s)
- D. Phan, G. Chung - School of Electrical Engineering, University of Ulsan (Republic of Korea)
- Pages
- 1070 - 1073
- DOI
- 10.5162/IMCS2012/P1.7.6
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
We report here the synthesis Ga-doped ZnO nanorods by hydrothermal (HT) method and investigate the effects of Ga-doping on their CO sensing properties. It is found that Ga doping cancel out oxygen-related defects (oxygen interstitial) based on the results of photoluminescence (PL) experiments and further confirmed by the CO sensing experiment. The defect-controlled, which are donor-(shallow donor and zinc interstitial) and acceptor-related (oxygen interstitial) ones, in ZnO nanorods were adjusted by Ga doping level. The CO sensing properties of ZnO nanorods are effectively improved by Ga doping. These can be explained in term of the removal excess oxygen in ZnO nanorods surface, increase shallow donor concentration and Ga-doped ZnO formed active component for CO absorption.