1.5.5 Room temperature benzene gas detection using gated lateral BJT with assembled solvatochromic dye
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- 1.5 Transistor-based Sensors
- Author(s)
- H. Yuan, B. Wang, S. Yeom - School of Electrical Engineering and Computer Science, Kyungpook National University (Korea), D. Kwon - Department of Electronic Engineering, Kyungil University (Korea), S. Kang - Department School of Electronics Engineering, College of IT engineering, Kyungpook National University (Korea)
- Pages
- 144 - 147
- DOI
- 10.5162/IMCS2012/1.5.5
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
In this study, a new type of room temperature operated volatile organic compounds (VOCs) gas sensor was developed based on gated lateral bipolar junction transistor (BJT). The proposed sensor device was fabricated using standard 0.35-μm complementary metal-oxide-semiconductor transistor (CMOS) process. The specific metaloxide-semiconductor field-effect transistor (MOSFET)-BJT hybrid structure cause that the device can be operated under room temperature without gate bias supply. 4-amino-N-methylphthalimide (4-ANMP) dye is a kind of solvatochromic dye which has charge-transfer (CT) character was immobilized on the floating gate of the gated lateral BJT by using self-assembled monolayer (SAM) method, acted as the sensing membrane. Benzene gas as the sensing target was detected in this study. According to the results, the sensor device can be used for VOCs gas detecting at room temperature.