P2.5.5 High pH-sensitive ion selective field effect transistor using porous poly Si gate

Event

14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany

Chapter

P2.5 FET-based Sensors

Author(s)

M. Mahdavi, M. Shahmohammadi, N. Sadeghi, F. Karbassian, S. Mohajerzadeh, N. Zehfroosh - Thin Film and Nano-Electronic Laboratory, University of Tehran (Iran)

Pages

1583 - 1586

DOI

10.5162/IMCS2012/P2.5.5

ISBN

978-3-9813484-2-2

Price

free

Abstract

High performance ISFETs by means of a layer of poly Si nanostructures placed on the gate oxide has been fabricated. The pre-deposited poly Si layer has been treated in a RIE (Reactive Ion Etching) sequential etching/passivation process to attain porous structures. The impact of plasma power, gases flow rates, subsequence duration, and sequence repetition has been studied on the characteristics of the porous layer and the fabricated ISFETs in order to achieve high ion sensitive layer. The constant current pH sensitivity up to 500 mV/pH has been obtained.