P2.5.5 High pH-sensitive ion selective field effect transistor using porous poly Si gate
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- P2.5 FET-based Sensors
- M. Mahdavi, M. Shahmohammadi, N. Sadeghi, F. Karbassian, S. Mohajerzadeh, N. Zehfroosh - Thin Film and Nano-Electronic Laboratory, University of Tehran (Iran)
- 1583 - 1586
High performance ISFETs by means of a layer of poly Si nanostructures placed on the gate oxide has been fabricated. The pre-deposited poly Si layer has been treated in a RIE (Reactive Ion Etching) sequential etching/passivation process to attain porous structures. The impact of plasma power, gases flow rates, subsequence duration, and sequence repetition has been studied on the characteristics of the porous layer and the fabricated ISFETs in order to achieve high ion sensitive layer. The constant current pH sensitivity up to 500 mV/pH has been obtained.