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AP2.2 - Artificial Synapse and Neuron Combining the Ion-Sensitive Field-Effect Transistor and Memristor

Event
17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria
Chapter
Applications 2 - Real-life Environments
Author(s)
S. Choi, S. Kim, J. Jang, G. Ahn, J. Jang, D. Kim, S. Choi, S. Lee, H. Mo, D. Kim - School of Electrical Engineering, Kookmin University, Seoul (Republic of Korea), T. Park - Department of Chemistry, Chung-Ang University, Seoul (Republic of Korea), B. Park - Department of Electrical and Computer Engineering, Seoul National University (Republic of Korea)
Pages
358 - 359
DOI
10.5162/IMCS2018/AP2.2
ISBN
978-3-9816876-9-9
Price
free

Abstract

Implementations of artificial synapse and neuron are presented by combining the silicon nanowire ionsensitive field-effect transistor (ISFET) and the indium-gallium-zinc-oxide (IGZO) memristor. Chemical and electrical operations of synapse are emulated by the pH sensor operation of ISFET and by the long-term potentiation of IGZO memristor, respectively. The concentration of hydrogen ions in electrolyte is successfully transformed via the voltage-controlled oscillator (VCO)-based neuron into the modulation of synaptic strength, i.e., the current of memristor. Proposed synapse and neuron show the feasibility of emulating the brain-inspired computing along with taking into accounts both chemical and electrical operation of synapse.

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