P2MM.10 - Responses’ time Parameters of Hydrogen Sensors based on MISFET with Pd(Ag)-Ta2O5-SiO2-Si structure
- Event
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria - Chapter
- P-2 - Mechanisms, Modeling and Simulation
- Author(s)
- B. Podlepetsky, N. Samotaev - National Research Nuclear University MEPHI, Moscow (Russia), A. Kovalenko - Induko Ltd., Moscow (Russia)
- Pages
- 844 - 845
- DOI
- 10.5162/IMCS2018/P2MM.10
- ISBN
- 978-3-9816876-9-9
- Price
- free
Abstract
The influence of the hydrogen concentration and electric modes of measuring circuit on times’ parameters of responses of hydrogen sensors based on metal-insulator-semiconductor field-effect transistor (MISFET) with structure Pd(Ag)-Ta2O5-SiO2-Si have been experimentally studied. MISFET sensing element has been fabricated by means of conventional MOS-technology on single silicon chip together with (p–n)-junction temperature sensor and heater-resistor.There were measured the responses of MISFETs for different hydrogen concentrations and drain currents. MISFET hydrogen sensors has been investigated by modelling. The sensor conversion function, hydrogen sensitivity, errors and power consumption have been studied. The studies have shown how the responses’ times parameters (response and relaxation times) depend on hydrogen concentrations and the measuring circuit‘s electric modes. The models of MISFET’s responses for different hydrogen concentrations are presented in this work.