T4.3.3 - Development and Characterization of Tribotronic Transistor based on ZnO thin film
- Event
- EUROSENSORS XXXVII
2025-09-07 - 2025-09-10
Wroclaw - Band
- Lectures
- Chapter
- T4.3 - Novel Technologies and Applicatons of Sensors 2
- Author(s)
- M. Moustaka, C. Tsamis - National Center for Scientific Research “Demokritos”, Athens (Greece), E. Hourdakis - National Technical University of Athens, Athens (Greece)
- Pages
- 118 - 119
- DOI
- 10.5162/EUROSENSORS2025/T4.3.3
- ISBN
- 978-3-910600-07-2
- Price
- free
Abstract
In this work, we present a tribotronic field effect transistor (T-FET) composed of a ZnO active layer and Al interdigitated electrodes (IDEs). Integrating the gate dielectric with one of the triboelectric surfaces, we demonstrate the modulation of carrier transport by the triboelectric potential generated during contact separation cycles. The electrical characterization of the T-FET is carried out measuring the output volt-age of the device under varying contact forces and distances for different triboelectric materials. The resulting modulation proposes a promising device for self-powered interactive electronics.