7.3.3 - Geometrical Optimization of Planar Hall Sensors Dominated by 1/f Noise for Maximal Signal-to-Noise Ratio

Event

EUROSENSORS 2026
2026-09-06 - 2026-09-09
Zurich

Band

Lectures

Chapter

Sensor Fundamentals & Modelling

Author(s)

A. Fleck, O. Paul - University of Freiburg,Freiburg (Germany), L. Osberger, M. Cornils, M. C. Vecchi - TDK-Micronas GmbH,Freiburg (Germany)

Pages

240 - 241

DOI

10.5162/eurosensors2026/7.3.3

ISBN

978-3-910600-12-6

Price

free

Abstract

We present the sensing properties of a CMOS-compatible Charge- and Capacitance-Sensitive FieldEffect Transistor (CCSFET) operated in gaseous environments. The device comprises two sensing areas, each integrating a chemically sensitive capacitor and a potential probe that together form the floating gate of a MOS transistor. In addition, the potential probe is connected to an operational amplifier (OpAmp), enabling robust electrical readout via both the MOSFET and the OpAmp. The CCSFET is flip-chip packaged onto a flexible substrate, which improves mechanical robustness and ensures reliable signal acquisition. As a demonstration, we investigate room-temperature hydrogen sensing using a thin Pd layer deposited on two different sensing layers, Si ₃ N ₄ and Ta ₂ O ₅ of CCSFT.