3.5.3 High Polarization HfO2 Sensing on K+ for Inflammasome Cell Detection Application
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- 3.5 ISFETs
- Author(s)
- P. Liao, K. Ho, J. Wang, C. Lai - Department of Electronic Engineering, Chang Gung University (Taiwan), S. Tsai, H. Lai - Department of Medical Biotechnology and Laboratory Sciences, Chang-Gung University (Taiwan), C. Lue - Device Section, Department of WAT and Devices, Inotera Memories Inc. (Taiwan)
- Pages
- 312 - 315
- DOI
- 10.5162/IMCS2012/3.5.3
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
In this study, a novel method was proposed to detect the inflammasome activation from extracellular potassium ion concentration. The sensor platform was designed as the electrolyte insulator semiconductor (EIS) structure with fluorinated HfO2 sensing membrane. The potassium (K+) sensitivity of HfO2-EIS structure is 10.28 mV/pK in the concentration between 10^-5 M and 1 M. For the samples with fluorine (F19+) ion implantation, the pK sensitivity can be effectively improved to 56.02 mV/pK. The variation of K+ concentration under treatment with the nigericin was 64.65 mV. It takes the advantage of directly monitoring the alteration of K+ as the measurement indicator of inflammasome activation.