6.3.3 Hydrogen Sensor Using Thin Film with Interspace
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- 6.3 Metal Oxide-based Gas Sensors VI
- K. Sawaide, T. Yamada, K. Hara - Tokyo Denki University (Japan)
- 544 - 546
A Hydrogen sensor using a multiple layered thin film with an interspace is presented. The material for the sensing film is WO3-based. The sensor is highly sensitive to hydrogen gas without using any noble catalysts that are expensive and may lead to degradation of the sensitivity. The porous structure of the sensing film with an interspace in addition to the porous structure of the sensing film itself enhances the effective surface area and thus the sensitivity to hydrogen gas. The selectivity to hydrogen gas is also enhanced by the proposed structure. The response time and recovery time are 15s and 20s, respectively. All films are deposited by r.f. sputtering and an interspace is released by sacrificial layer etching of a SiO2 film.