P2 - Investigation of InAsSbP Quantum Dot Mid-Infrared Sensors
- AMA Conferences 2015
2015-05-19 - 2015-05-21
- Proceedings IRS² 2015
- IP - Poster Session
- V. Harutyunyan, K. Gambaryan, V. Aroutiounian - Yerevan State University (Armenia)
- 967 - 970
This work presents the results of investigation of low bias mid-IR photoconductive cell (PCC) with quantum dots. Self-assembled InAsSbP nanostructures were grown on InAs(100) substrate by modified liquid phase epitaxy. Hysteresis with remnant capacitance of 0.483 pF and contra-directional oscillations on the PCC’s capacitance–voltage characteristic at 78 K were observed. Additionally, peaks at 3.48 μm, 3.68 μm and 3.89 μm on room temperature photoresponse spectrum of quantum dot photoconductive cell were detected. Room temperature photo-sensing properties were investigated under monochromatic irradiation of 3.39 μm as well. At irradiation power density of 0.07 W/cm2 the surface resistance of the PCC was reduced up to 10 %. In the case of 8 mV applied voltage, the current responsivity of 0.2 mA/W was measured.