M2.1.3 - SILICON CARBIDE ON INSULATOR (SiCOI) MATERIALS FOR MEMS AND QUANTUM APPLICATIONS USING WAFER BONDING METHODS
- Event
- EUROSENSORS XXXVII
2025-09-07 - 2025-09-10
Wroclaw - Band
- Lectures
- Chapter
- M2.1 - Quantum Sensors
- Author(s)
- H. D. Ngo, B. Wang, T. Weiland, O. Pohl - University of Applied Sciences Berlin, Berlin (Germany), B. Naydenov - Helmholtz Centre Berlin for Material Research and Energy, Berlin (Germany), T. S. Nguyen - Linköping University, Linköping (Sweden), Y. Akabane - TDC Corporation, Rifucho Miyagi (Japan)
- Pages
- 64 - 65
- DOI
- 10.5162/EUROSENSORS2025/M2.1.3
- ISBN
- 978-3-910600-07-2
- Price
- free
Abstract
This paper reports two novel process flows to fabricate SiCOI (Silicon Carbide on Insulator) with very high purity for use in MEMS and quantum applications using anodic bonding. 10⁰mm SiCOI wafers with different over layer thicknesses have been fabricated using semi insulating 4HSiC material from Cree. Samples with color centers (SiV) ensemble have been fabricated and verified using EPR (Electron Par-amagnetic Resonance) and ODMR (Optically Detected Magnetic Resonance). EPR-results show the feasibility of this technology and the potential of this material for MEMS and quantum applications. The coherence time in RT is in hundred ms range similar to the one from NV diamond.