MP55 - C-V measurement of Schottky Barrier LSMO/Nb:STO heter-ostructure dedicated to optoelectronic devices
- Event
- EUROSENSORS XXXVII
2025-09-07 - 2025-09-10
Wroclaw - Band
- Poster I
- Chapter
- Novel Technologies and Applicatons of Sensors
- Author(s)
- F. Gning, J. Blond, V. Pierron, L. Méchin, B. Guillet - Caen Normandy University, Caen (France)
- Pages
- 313 - 314
- DOI
- 10.5162/EUROSENSORS2025/MP55
- ISBN
- 978-3-910600-07-2
- Price
- free
Abstract
This study investigates the electrical properties of the Schottky diode based on the heterostructure formed by the association of a La₂/3Sr₁/3MnO₃ (LSMO) thin film with a 0.01 %wt Nb-doped SrTiO₃(Nb:STO) substrate. Capacitance-voltage (C–V) measurements in reverse bias were carried out at 10⁰ kHz from 300 K to 380 K. The dopant concentration of substrate and the Schottky Barrier Height were extracted from the 1/C²–V curve fit. The results show a systematic increase in both parameters with temperature, affecting the space-charge region and shifting the spectral response from near-infrared to visible. These results highlight the importance of a good knowledge of oxide interface electrical proper-ties and also the potential of oxide thickness engineering for improving diode photodetection efficiency.