Mo-ESM-05 - Characterization of Aluminum Nitride on vertical side walls

Event

EUROSENSORS 2026
2026-09-06 - 2026-09-09
Zurich

Band

Poster

Chapter

Emerging Sensor Materials

Author(s)

M. -T. Becker, M. B. Venkatesan, A. Bittner, A. Dehé - Hahn-Schickard,Villingen-Schwenningen (Germany)

Pages

453 - 454

DOI

10.5162/eurosensors2026/Mo-ESM-05

ISBN

978-3-910600-12-6

Price

free

Abstract

AlN is used for actuation of vertical sidewalls e.g. for a MEMS speaker with a high aspect ratio membrane. This actuation of vertical sidewalls by a sputtered AlN layer generates new challenges regarding the characterization of piezoelectric quality along the vertical sidewalls. This work utilizes Fourier transform infrared (FT-IR) microscopy to measure crystallinity and crystal orientation of the layers. FT-IR spectroscopy was found to be a suitable method to characterize vertical AlN sidewalls. Results for crystallinity and crystal orientation of AlN are discussed and compared to surface measurements.