Mo-POS-03 - Atomic Structure and Temperature-dependent Photoluminescence of Si-doped Epitaxial Diamond Layer on Nitrogen-rich HPHT Single Crystal Diamond

Event

EUROSENSORS 2026
2026-09-06 - 2026-09-09
Zurich

Band

Poster

Chapter

Photonics And Optical Sensors

Author(s)

T. Izsak, I. Kozak, M. Hulman, A. Kozak, M. Varga - Slovak Academy of Sciences,Bratislava (Slovak Republic), V. Vretenar, M. Matko - Slovak University of Technology,Bratislava (Slovakia)

Pages

515 - 516

DOI

10.5162/eurosensors2026/Mo-POS-03

ISBN

978-3-910600-12-6

Price

free

Abstract

A single crystal diamond was epitaxially overgrown by MWCVD in the presence of Si wafer pieces. Such a simple approach enables direct growth of Si-doped diamond films (containing SiV color cen-ters) on the nitrogen-rich substrate (containing NV color centers). The sample was studied by means of its atomic structure and its correlation with the temperature- (5–500 K) and excitation wavelength-dependent (405, 488, 532 and 633 nm) photoluminescence properties. Combining and understanding the behavior of different color centers in a single diamond sample opens up new possibilities for various applications.