8.1.1 InGaN/GaN nanowire based opto-chemical sensor for detecting hydrogen and hydrocarbons at low temperature
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- 8.1 Chemical Sensors based on III-V Semiconductors
- S. Paul, A. Helwig, G. Müller - EADS Innovation Works (Germany), J. Teubert, M. Eickhoff - I. Physikalisches Institut, Justus-Liebig-Universität (Germany)
- 663 - 664
We report on InGaN/GaN nanowires (NWs) as opto-chemical transducers for the detection of H2 and hydrocarbons. The NWs exhibit a strong photoluminescence (PL) which persists up to temperatures of 150°C and above. The GaN/InGaN NWs were grown by plasma-assisted molecular beam epitaxy on low-resistivity n-type Si (111) substrates and covered with a semitransparent catalytic Pt-coating after deposition. With the thin Pt coating on top, the PL intensity is dependent on the concentration of hydrogen or hydrocarbons in the surrounding atmosphere. Contrary to commercially available hydrogen sensors e.g. Pd or Pt gated high electron mobility transistors or catalytically activated metaloxide- silicon-carbide FETs our all-optical sensor system allows detection of ppm concentrations of H2 at low operating temperatures (30°C-120°C).