8.1.5 Nitrate-selective gallium nitride transistor-based ion sensors with low detection limit
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- 8.1 Chemical Sensors based on III-V Semiconductors
- Author(s)
- M. Myers - CSIRO Earth Science and Resource Engineering (Australia), A. Podolska, T. Pope, F. Khir, B. Nener, M. Baker, G. Parish - The University of Western Australia (Australia)
- Pages
- 671 - 673
- DOI
- 10.5162/IMCS2012/8.1.5
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
AlGaN/GaN heterostructures functionalised with ion-selective membranes have been used to form field effect transistor (FET)-like nitrate sensors which operate without the requirement for a reference electrode. These sensors demonstrate a wide range of sensitivity of 1x10^-6 – 1x10^-2M (62 ppb – 620ppm) and a low detection limit below 1x10^-7M (6.2 ppb). The low detection limit for this device is superior to the original published results for standard ion selective electrodes (ISEs) using a similar membrane chemistry. The membrane chemistry for these sensors was modified from the original recipe in order to optimise application to small area devices.