P1.0.1 Porous WO3-NiO Thin Films Prepared by Sol-Gel Method for Selective Acetone Gas Detection

Event
14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany
Chapter
P1.0 Metal Oxide-based Sensors
Author(s)
P. Gao, H. Ji, Q. Jia, Y. Zhou - Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials Science and Engineering of Tianjin University (China)
Pages
746 - 749
DOI
10.5162/IMCS2012/P1.0.1
ISBN
978-3-9813484-2-2
Price
free

Abstract

Porous WO3-NiO thin films were prepared by sol-gel method. The microstructure and surface morphology were characterized by using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The acetone vapor sensing properties were investigated as functions of NiO content, acetone concentration, sintering temperature, and porous structure. Electrical properties were studied by conductivity measurement. As prepared WO3-NiO thin films show well response towards acetone gas. The sensitivity of 1.0 mol % Ni-doped WO3 thin films to 20 ppm acetone gas sintered at 500 °C for 1h attained 5.83. Therefore, Ni-doped WO3 thin films show the principal possibility of application of semiconducting gas sensors in the diagnosis of diabetes.

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