P1.0.2 Hydrogen Gas Sensor Based on β-Ga2O3 Thin Film with a Function of Self Temperature Compensation

Event
14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany
Chapter
P1.0 Metal Oxide-based Sensors
Author(s)
S. Nakagomi, T. Sai, Y. Kokubun - Ishinomaki Senshu University (Japan)
Pages
750 - 753
DOI
10.5162/IMCS2012/P1.0.2
ISBN
978-3-9813484-2-2
Price
free

Abstract

Field effect Hydrogen gas sensor devices based on beta-Ga2O3 thin films with a function of temperature compensation were fabricated. beta-Ga2O3 thin films were deposited on sapphire substrate by gallium evaporation in oxygen plasma. Resistance between two ohmic electrodes on beta-Ga2O3 thin film with Pt gate was decreased in H2 ambient. The sensor can detect 100ppm H2 under 20%O2 at 400°C. The resistance of the device without gate little changes for an ambient variation. By connecting the devices with and without gate in series, the devices have a function of self temperature compensation. It was demonstrated that the device kept stable output even for temperature fluctuation over 100°C.

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