2025 SMSI Bannerklein

P1.8.8 Fabrication and properties of an OLED-based gas sensor with poly(3-hexylthiophene) sensing film

Event
14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany
Chapter
P1.8 Sensors Based on New Materials
Author(s)
G. Xie, Y. Jiang, X. Du, H. Tai, W. Li - School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (China)
Pages
1130 - 1133
DOI
10.5162/IMCS2012/P1.8.8
ISBN
978-3-9813484-2-2
Price
free

Abstract

An OLED-based gas sensor is fabricated with the device structure as ITO/N,N'-bis(naphthalen-1-yl) - N,N-bis(phenyl)-benzidine (NPB)(30 nm)/tris(8-hydroxy-quinolinatoo)aluminium (Alq3)(50 nm)/poly(3hexylthiophene-2,5-diyl) (P3HT)(x nm)/Mg: Ag (300 nm). The P3HT is applied as the sensitive layer in the OLED-based gas sensor, while red light emission can be observed from the OLED. The response of the device in NO2 and NH3 circumstance is investigated respectively by analyzing its effect on variation of the current density. The results show that the NO2 concentration has an obvious influence on the current density of the device, and the current density decreases faster under the higher NO2 concentration. Meanwhile, the current density of the device increases when it is exposed in the NH3 circumstance. The sensing mechanism of the device is also discussed.

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