P1.8.4 Fabrication and Characterization of Hydrogen Sensors Using Graphenes Formed on the 3C-SiC Thin Films
- Event
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany - Chapter
- P1.8 Sensors Based on New Materials
- Author(s)
- S. Bae, K. Kim, G. Chung - School of Electrical Engineering, University of Ulsan (Republic of Korea)
- Pages
- 1116 - 1118
- DOI
- 10.5162/IMCS2012/P1.8.4
- ISBN
- 978-3-9813484-2-2
- Price
- free
Abstract
This paper presents the fabrication and characterization of graphene based hydrogen sensors. Graphenes were synthesized by annealing process of Ni/3C-SiC thin film. The Ni thin film was deposited on a 3C-SiC substrate and used extracts the substrate's carbon atoms under rapid thermal annealing. Synthesized graphene transferred onto SiO2 substrate by chemically etching of Ni in HF solution. Au electrode on the graphene shows ohmic contact and the resistance was changed with hydrogen concentration. Initial resistance of graphene was around of 360 and Pd coated graphene resistance shows 27 . Sensing performance of hydrogen sensors based on the graphene is improved with Pd catalyst. The response factors of