P2.8.1 Single crystal GaN/AlN/Si (1 1 1) Papered via PA-MBE for Hydrogen Gas Sensor Application

Event

14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
Nürnberg/Nuremberg, Germany

Chapter

P2.8 Sensors Based on New Materials

Author(s)

A. Ramizy - Physics department-Collage of sciences - University of Anbar-(Iraq), Z. Hassan - School of PhysicsUniversiti Sains Malaysia (Malaysia)

Pages

1644 - 1647

DOI

10.5162/IMCS2012/P2.8.1

ISBN

978-3-9813484-2-2

Price

free

Abstract

The growth of heterostructure of n-type GaN/AlN/Si (1 1 1) is carried out using the molecular beam epitaxy (MBE) Veeco model Gen II system. The surface morphology of the as-grown GaN sample showed a high quality single crystal of GaN epilayer. The PL spectrum showed a strong emission and a sharp peak located at 364.5 nm (3.40 eV ), which is attributed to the band edge emission of GaN. Raman spectra also displayed a strong band at 522cm-1 from the Si (1 1 1) substrate, Two Raman active optical phonons are assigned to h-GaN at 139cm-1 and 568cm^-1, due to E2 (low) and E2 (high) respectively. The sensitivity of the gas sensor is increased as a function of the hydrogen flow rate.