P2.6 Analysis of photoelastic properties of monocrystalline silicon
- Event
- 20. GMA/ITG-Fachtagung Sensoren und Messsysteme 2019
2019-06-25 - 2019-06-26
Nürnberg, Germany - Chapter
- P2: Messsysteme
- Author(s)
- M. Stoehr, S. Schoenfelder - Hochschule für Technik, Wirtschaft und Kultur Leipzig (Deutschland), G. Gerlach - TU Dresden (Deutschland), T. Härtling - Fraunhofer-Institut für Keramische Technologien und Systeme, Dresden (Deutschland)
- Pages
- 695 - 699
- DOI
- 10.5162/sensoren2019/P2.6
- ISBN
- 978-3-9819376-0-2
- Price
- free
Abstract
Photoelasticity could be a useful measurement tool for non-destructive, contactless determination of mechanical stresses or strains in production of silicon wafers. It describes a change in indices of refraction of materials when stressed. Since silicon has a diamond lattice structure, the stress-dependent change in refractive indices varies with loading direction. In this work an anisotropic stress-optic law is derived and compared to existing models for photoelasticity in silicon from literature.