MP4 - PEDOT: PSS gated field-effect transistor for ion sensing applications
- Event
- EUROSENSORS XXXVII
2025-09-07 - 2025-09-10
Wroclaw - Band
- Poster I
- Chapter
- Bio/chemical and Environmental Sensors
- Author(s)
- X. T. Vu, Y. Zhang, S. Ingebrandt - RWTH Aachen University, Aachen (Germany)
- Pages
- 210 - 211
- DOI
- 10.5162/EUROSENSORS2025/MP4
- ISBN
- 978-3-910600-07-2
- Price
- free
Abstract
This paper introduces a new approach utilizing poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) as the gate electrode of an ion-sensitive field-effect transistor (ISFET) in a configuration similar to a metal oxide semiconductor field-effect transistor (MOSFET) for ion sensing applications. The transistor exhibited the capability to operate effectively in both dry and aqueous environments. In the latter case, the aqueous solution is in direct contact with the PEDOT:PSS while the gate voltage is applied to the PEDOT:PSS gate. Experimental results demonstrated significant sensitivity to the con-ductivity of the solution and stable performance of the device over many cycles.