MP16 - Highly Sensitive Biosensor Platform Based on Substrate Bias Extended-Gate Field-Effect Transistor
- Event
- EUROSENSORS XXXVII
2025-09-07 - 2025-09-10
Wroclaw - Band
- Poster I
- Chapter
- Bio/chemical and Environmental Sensors
- Author(s)
- F. Ughi - Chang Gung University, Taoyuan (Taiwan), E. Remiszewska, D. G. Pijanowska - Polish Academy of Sciences, Warsaw (Poland), C. -S. Lai - National Yang Ming Chiao Tung University, Hsinchu (Taiwan), C. -M. Yang Chang Gung University - Taoyuan (Taiwan)
- Pages
- 234 - 235
- DOI
- 10.5162/EUROSENSORS2025/MP16
- ISBN
- 978-3-910600-07-2
- Price
- free
Abstract
A novel electrical protocol featuring substrate bias modification is applied to extended-gate field-effect transistors (EGFETs) to enhance the pH sensitivity beyond the Nernst limit. The sensitivity enhancement driven by the body effect characteristics of the p-channel metal-oxide-semiconductor field-effect transis-tor (MOSFET), which serves as the transducer. As proof-of-concept in the biosensor application, the proposed method achieved sensitivity around 320 mV/dec for DNA detection, 16 times higher than the conventional gate-bias configuration which yielded sensitivity around 20 mV/dec.