P42 - Formation and role of the interface region in metal oxide layers
- Event
- iCCC2026 - iCampus Cottbus Conference
2026-05-05 - 2026-05-07
Cottbus - Band
- Poster
- Chapter
- Material- & Prozesstechnologie
- Author(s)
- C. Morales, R. Tschammer, D. Guttmann, K. Henkel, J. I. Flege - BTU Cottbus-Senftenberg, Cottbus, C. Alvarado, C. Wenger - IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder)
- Pages
- 290 - 293
- DOI
- 10.5162/iCCC2026/P42
- ISBN
- 978-3-910600-10-2
- Price
- free
Abstract
In miniaturized gas resistive-sensor systems, understanding sensor performance and determining the optimal thickness of the active material requires an in-depth characterization of material deposition. In particular, the early stages of growth are mediated by interface formation and film/substrate interaction, which influence the mode of growth and the physicochemical properties of the active deposit, likely affecting the sensor response for ultrathin layers. We present the use of in-situ X-ray photoelectron spectroscopy and operando spectroscopic ellipsometry for characterizing thin (<20 nm) atomic layer-deposited layers for use in next-generation miniaturized sensor devices. By targeting cerium and tin oxide layers, we demonstrate how these techniques can provide insights into their material composition, thickness, and optical properties during interface formation and the transition to bulk-like properties.