P43 - Cleaning effect on surface activated aluminum to aluminum wafer bonding
- Event
- iCCC2026 - iCampus Cottbus Conference
2026-05-05 - 2026-05-07
Cottbus - Band
- Poster
- Chapter
- Material- & Prozesstechnologie
- Author(s)
- S. Schulze, T. Voß, P. Krüger, R. Lukose, P. Kulse, M. Wietstruck - IHP Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder)
- Pages
- 294 - 296
- DOI
- 10.5162/iCCC2026/P43
- ISBN
- 978-3-910600-10-2
- Price
- free
Abstract
This work presents a surface activated aluminum to aluminum (Al-Al) wafer bonding process and the effect of different cleaning chemistries used after dry etching on the later bonding quality. Different cleaning procedures based on ammonium fluoride (NH₄F) and a hydroxylamine (NH₂OH) were investigated. The bonding quality was evaluated using Cmode scanning acoustic microscopy (C-SAM) and the results were correlated to the surface properties of the aluminum investigated with atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). We show that the best bonding quality is obtained using a 20 min NH₂OH-based clean. It efficiently removes etch residues without significantly affecting the surface properties of aluminum.