P1.4.6 Investigations on the sensing mechanisms in silicon nanowire Schottky-barrier field effect sensors
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- P1.4 Nanostructured Sensors
- S. Pregl, L. Römhildt, L. Baraban - Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden (Germany), W. Weber - NaMLab GmbH (Germany), J. Opitz - Fraunhofer Institute IZFP Dresden (Germany), T. Mikolajik - Institute for Semiconductors and Microsystems Technology, TU Dresden (Germany), G. Cuniberti - Division of IT Convergence Engineering, POSTECH, Pohang (Korea)
- 994 - 996
Surface functionalization of NiSi2-Si-NiSi2 nanowire heterostructures, acting as Schottky-junction field effect transistors (SB-FETs) represent a promising route for biosensor applications. Axially Nisilicidized silicon nanowires exhibit a very sharp metal-semiconductor interface, thus forming a well defined and reproducible Schottky barrier. These barriers determine the current through the wire and can be changed by small molecules chemiadsorbed on the nanowire surface. We report that surface modifications can alter the polarity of the devices. This severe influence on the charge transport implies ultrahigh sensitivity for nanowire SB-FETs.