FE.1 - Low power analog frontend for ISFET sensor readout
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
- Field-Effect Sensors
- J. Zhang, F. Bellando, E. Garcia Cordero, M. Fernandez-Bolanos, A. Ionescu - Nanolab, École Polytechnique Fédéral de Lausanne (Switzerland), M. Mazza - University of Applied Science Western Switzerland, Fribourg (Swizerland)
- 423 - 424
A low power analog frontend (AFE) for Ion-Sensitive Field effect Transistor sensor readout presented. The AFE is demonstrated with off-the-shelf components. It includes a biasing circuit to an ISFET sensor, a noise rejecting current readout circuit, and a igma-delta analog to digital converter. The digital output can be interpreted by a simple counter to acquire the ion-concentration in a drop of liquid on top of the calibrated ISFET sensor. A PH sensing experiment is performed validate the AFE. Total power consumption is less than 40 μW with 1.8 V supply.