P2EC.11 - Lateral Double-diffused Metal Oxide Semiconductor for Sensor Applications

Event
17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
Vienna, Austria
Chapter
P-2 - Electrochemical Sensors
Author(s)
H. Jeong, H. Kwon, J. Kim, J. Kwon, S. Kim, B. Xu, R. Khan, S. Kang - School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu (South Korea)
Pages
721 - 722
DOI
10.5162/IMCS2018/P2EC.11
ISBN
978-3-9816876-9-9
Price
free

Abstract

In this study, we applied LDMOS using floating gate structure for chemical pH sensors. We confirmed the pH response characteristics of the proposed device. With this approach, pH-sensitive devices can be fabricated for chemical and biological sensor applications. To demonstrate the properties, we performed a response experiment by changing the pH value from pH 4 to pH 10. Results showed that the sensitivity of the proposed sensor to detect pH buffer solution was 1.5 nA/pH. The result of sensor application experiment proved that the LDMOS can be used to realize a sensor in chemical and biological sensor applications. Therefore, the proposed device was expected to be applicable to the design of pH-sensing devices in chemical and biological sensor applications.

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