P1GS.16 - SnO2/TiO2 thin film n-n heterostructures for H2 and NO2 gas sensing
- 17th International Meeting on Chemical Sensors - IMCS 2018
2018-07-15 - 2018-07-19
- P-1 - Gas Sensors
- K. Zakrzewska, P. Nowak, W. Maziarz, A. Rydosz, K. Kowalski - AGH University of Science and Technology, Krakow (Poland)
- 549 - 550
Pure SnO2 and SnO2/TiO2 heterostructure based gas sensors for reducing H2 and oxidizing NO2 in the temperature range of 80 400 °C were investigated. SnO2 thin films were prepared by RF magneton sputtering, whereas TiO2 layers were deposited using a relatively less exploited Langmuir-Blodgett (LB) technique. TiO2 thin films were characterized with different spectroscopy and imaging methods (XPS, XRD, EDS, SEM, optical profilometry) which confirmed the presence of TiO2 on the SnO2 surfaces. The resistance change of SnO2/TiO2 system is higher than that of pure SnO2 thin films for both H2 and NO2 gases. Additional TiO2 layers significantly improve the response of SnO2/TiO2 gas sensors (in comparison to pure SnO2) in the range of 200-400 °C even for low concentrations of NO2. It suggests SnO2/TiO2 heterostructure based sensors obtained using combined sputtering/L-B methods can be highly sensitive for H2 and NO2.