C9.3 Detecting Local Delamination of Power Electronic Devices through Thermal-Mechanical Analysis
- Event
- SMSI 2021
2021-05-03 - 2021-05-06
digital - Band
- SMSI 2021 - System of Units and Metreological Infrastructure
- Chapter
- C9 Advanced Testing Methods
- Author(s)
- H. Huai, G. Laskin, M. Fratz, T. Seyler, T. Beckmann, A. Bertz, J. Wilde - Albert-Ludwigs-University, Freiburg (Germany)
- Pages
- 312 - 313
- DOI
- 10.5162/SMSI2021/C9.3
- ISBN
- 978-3-9819376-4-0
- Price
- free
Abstract
Die attachment delamination is one of the most common defects that happen over the life-time of a power electronic module [1]. It is usually the consequence of thermal mechanical stress that occurs during active operation of the device due to CTE (coefficient of thermal expansion) mismatch of its components. Additionally, even during the production cycles, errors can emerge, where the chip is not fully attached to the substrate. This can lead to premature failure of the final product. Aim of this paper is the detection of local delamination spots through pre-existing optical techniques. This novel non-destructive method will allow the isolation of defective devices during production or warn the overall system during operation, if a failure is imminent.