P6.7 - High Temperature Stable Piezoelectric, Barrier and Insulation Coatings for Sensor Applications
- SENSOR+TEST Conferences 2011
2011-06-07 - 2011-06-09
- Proceedings SENSOR 2011
- P6 - Technology, Materials
- H. Bartzsch, P. Frach, D. Glöß, M. Gitter - Fraunhofer FEP, Dresden (Germany)
- 821 - 826
The paper presents AlN, Al2O3, SiO2 and Si3N4 films deposited by reactive magnetron sputtering at high deposition rates of 200nm/min. The deposited AlN films show a strong c-axis orientation and a piezoelectric coefficient d33 of 7pm/V. Al2O3, SiO2 and Si3N4 films and their combinations are excellent insulation films on both metal and silicon substrates. High insulation strength of up to 1000V was measured at room temperature and at high temperatures of 400°C. These films perform also well as barrier films. Water vapor transmission rate (WTR) of Al2O3 is for example <10-2 g/(m2*d). Stability of the films during heat treatment at 800°C was shown. In the paper example of applications in pressure sensors and material testing are given.