P6.9 - Development of New Capacitive Strain Sensor Based on Transparent Conductive Oxides Thin Films
- SENSOR+TEST Conferences 2011
2011-06-07 - 2011-06-09
- Proceedings SENSOR 2011
- P6 - Technology, Materials
- A. Ghinea, A. Klein - Technische Universität Darmstadt (Germany)
- 831 - 836
Capacitive sensors can directly sense a variety of variables such as pressure, acceleration, fluid level and fluid composition which induce changes of capacitor dimension or dielectric constant. This work is focused on developing a transparent capacitive strain sensor using the thin film technology. We have investigated the strain sensing characteristics of transparent conductive oxides (like indiumtin oxide) and of interface between transparent electrode and dielectric material. The thin films were grown on different substrates by magnetron sputtering varying the sputter parameters. In order to perform the electromechanical characterizations of the passive sensors, an experimental set-up based on the 4-Point bending theory was used. A variation in capacitance is noticed when a mechanical stress is applied to the samples. It was observed that the change in capacitance depend strongly on applied DC bias and measurement frequency.