M2.2.4 - Impact of Nitrogen Doping on the Q-Factor of Polycrystalline 3C-SiC MEMS Resonators
- Event
- EUROSENSORS XXXVII
2025-09-07 - 2025-09-10
Wroclaw - Band
- Lectures
- Chapter
- M2.2 - MEMS
- Author(s)
- D. Huber, P. Jurekovic, C. Schallert, G. Pfusterschmied, U. Schmid - TU Wien, Vienna (Austria)
- Pages
- 72 - 73
- DOI
- 10.5162/EUROSENSORS2025/M2.2.4
- ISBN
- 978-3-910600-07-2
- Price
- free
Abstract
This paper reports on the impact of nitrogen doping on the quality factor (Q) of polycrystalline 3C-SiC MEMS resonators. The resonance characteristics of mechanical beam resonators fabricated from an unintentionally and an intentionally doped 3C-SiC thin film were measured with laser Doppler vibrometry.We find a reduction of Q of 28% and 39% for the first and second out-of-plane modes when comparingthe unintentionally with the intentionally doped thin film. The difference in Q is attributed to a modification of Young’s modulus (E), due to a change in microstructure and/or the average bond strength.