P2.9.1 Thermodynamic Studies on GaAs-Based Chemical Sensors with a Mixture of Pd and SiO2
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- P2.9 Technology and Application
- C. Wei, S. Tan, T. Tsai, W. Lour - Department of Electrical Engineering, National Taiwan Ocean University (Taiwan), C. Lo - Department of Electrical Engineering, National Sun Yat-Sen University (Taiwan)
- 1696 - 1698
Thermodynamic sensing properties of GaAs-based hydrogen sensors with a mixture of Pd and SiO2 were investigated by raising ambient temperature. Temperature dependence of the ability of SiO2 to catch hydrogen atoms was addressed to introduce a newly possible sensing mechanism for innovative sensor design. A high sensing current gain over 3000, a detection limit lower than 50 ppm, and a response time shorter than 20 s were obtained from the sensor.