P2.0.1 Investigations of dielectric and semiconductor oxides obtained by Atomic Layer Deposition method for transparent electronic sensor devices
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- P2.0 Metal Oxide-based Sensors
- S. Gieraltowska, L. Wachnicki, B. Witkowski, E. Guziewicz - Polish Academy of Sciences, Institute of Physics (Poland), M. Godlewski - Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences (Poland)
- 1257 - 1260
We have obtained the transparent structures on glass and quartz with all oxide elements deposited by the Atomic Layer Deposition (ALD) technique. Use of ALD is an important factor for sensor device manufacturing, because of simplicity and low costs of fabrication. Our work was focused on the optimization of deposition parameters of composite dielectric layers consisting of Al2O3, HfO2, ZrO2 and of ZnO semiconductor layers. These layers were then used for construction of transparent thin film transistor structures and of transparent thin film capacitor structures, with ZnO as a channel and a gate layer. The sensor structures were obtained at low temperature (no more than 100°C). These transparent structures work at room temperature and show sensor behavior to chemical.