P2.0.5 Studies of Hydrogen Gas Sensing Properties of Anatase TiO2 Thin Films Prepared by Magnetron Sputtering
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- P2.0 Metal Oxide-based Sensors
- A. Haidry, P. Durina, M. Truchly, L. Satrapinsky, T. Plecenik, M. Mikula, B. Grancic, T. Roch, M. Gregor, P. Kus, A. Plecenik - Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University (Bratislava), M. Tomasek - Department of Chemical Physics, Faculty of Chemical and Food Technology, Slovak University of Technology, (Bratislava)
- 1271 - 1274
Titanium dioxide thin films were deposited on sapphire substrates by reactive dc magnetron sputtering method. The prepared thin films were then annealed in air at various temperatures (600 - 800 °C) to achieve crystalline thin films having anatase phase. The comb-like Pt electrodes, with a distance of 10 µm, were prepared on the top of the films to measure the electrical and gas sensing properties. The films prepared in this work showed high electrical response for various concentrations of H2/air, ranging from 20 to 10 000 ppm. The response was tested in the working/operating temperature range 150 - 350 °C and it was observed that these thin films are the most sensitive at temperatures below 200°C.