P2.0.20 Enhancing p-type Co3O4 Gas Sensing Performances by Fluorine Doping
- 14th International Meeting on Chemical Sensors - IMCS 2012
2012-05-20 - 2012-05-23
- P2.0 Metal Oxide-based Sensors
- D. Bekemann, A. Gasparotto, C. Maccato, M. Gavagnin - Department of Chemistry, Padova University and INSTM (Italy), D. Barreca - CNR-ISTM and INSTM, Department of Chemistry, Padova University (Italy), E. Comini, G. Sberveglieri - CNR-IDASC, SENSOR Lab, Department of Chemistry and Physics, Brescia University (Italy), C. Sada - Department of Physics and CNISM, Padova University (Italy), A. Devi, R. Fischer - Lehrstuhl für Anorganische Chemie II, Ruhr-University Bochum (Germany)
- 1324 - 1327
In the present work, Co3O4-based materials were grown by Plasma Enhanced-Chemical Vapor Deposition (PECVD) and tested in the detection of reducing analytes (ethanol, acetone). In particular, Co3O4 and F doped Co3O4 deposits were synthesized in the range 200-400°C on polycrystalline Al2O3 substrates from Ar-O2 plasmas using Co(dpm)2 (dpm = 2,2,6,6-tetramethyl-3,5-heptanedionate) and Co(hfa)2•TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N’,N’tetramethylethylenediamine), respectively. In the latter case, a homogeneous fluorine doping throughout the whole deposit thickness was achieved, and its content could be controlled as a function of the deposition temperature. Notably, the sensing performances appreciably improved upon fluorine incorporation into cobalt oxide. To the best of our knowledge, this work is the first example of F doping in p-type metal oxide nanosystems aimed at enhancing their sensing properties.