C1.1 Thermal-electrical Design Improvements of a New CMOS Compatible Pyroelectric Infrared Sensor Based on HfO2
- SMSI 2020
(did not take place because of Covid-19 virus pandemic)
- SMSI 2020 - Sensors and Instrumentation
- C1 IRS² Satellite Conference: Infrared Detectors
- R. Lehmkau, M. Ebemann, D. Mutschall, N. Neumann - InfraTec GmbH, Dresden (Germany), J. Lienig - TU Dresden, Institute of Electromechanical and Electronic Design, Dresden (Germany)
- 143 - 144
The pyroelectric properties of doped hafnium dioxide (HfO2) are utilized to create a new CMOS compat-ible infrared sensor element suitable for mass production. In this paper, we propose a new sensor design with the goal of maximizing the temperature sensitivity and optimizing the thermal time constant. Fur-thermore, a thermal-electrical model of a complete pyroelectric detector is developed to estimate the signal and noise behavior.