A6.1 Full Stress Tensor Measurement by Photoelasticity in Silicon
- Event
- SMSI 2021
2021-05-03 - 2021-05-06
digital - Band
- SMSI 2021 - Sensors and Instrumentation
- Chapter
- A6 Sensor Materials I
- Author(s)
- M. Stoehr, S. Schoenfelder - University of Applied Sciences Leipzig, Leipzig (Germany), G. Gerlach - Technische Universität Dresden, Dresden (Germany), T. Härtling - Fraunhofer Institute IKTS, Dresden (Germany)
- Pages
- 75 - 76
- DOI
- 10.5162/SMSI2021/A6.1
- ISBN
- 978-3-9819376-4-0
- Price
- free
Abstract
Photoelasticity offers a promising measurement tool for the in-line measurement of semiconductor materials such as silicon. Photoelasticity is a contactless, optical and full-field measurement method based on stress-induced birefringence. However, it is in principle only capable of measuring stress differences and therefore not able to determine the quantitative stress state inside a material. In this work a method is presented to separate this stress difference using modified equations of the mechanical equilibrium in conjunction with the Finite-Difference-Method. This method takes into account the anisotropic photoelastic law for mono-crystalline silicon and enables a full separation of the mechanical stresses with a single measurement.