B10.1 A 64 x 48 BSI SPAD Sensor Based on 8” Wafer 3D Stacking Technology
- SMSI 2021
2021-05-03 - 2021-05-06
- SMSI 2021 - Sensors and Instrumentation
- B10 Optical Sensors and Measurement
- S. Grosse, A. Steuer, P. vom Stein, C. Zeidler, J. Haase - Fraunhofer IMS, Duisburg (Germany)
- 167 - 168
A 3D stacking process by direct wafer bonding and the resulting sensor are presented to emphasize the potential of this technology for future sensor developments. By using the Fraunhofer IMS own 0.35 μm CMOS and micro systems technology, a 64 x 48 pixel sensor containing backside-illuminated low-noise single-photon avalanche diodes and in-pixel time-to-digital converters was fabricated. It is being applied om light detection and ranging applications as well as quantum imaging and characterized in both photon timing and counting mode.