D5.2 - Optical and Tactile Measurements on SiC Sample Defects
- Event
- SMSI 2023
2023-05-08 - 2023-05-11
Nürnberg - Band
- Lectures
- Chapter
- D5 - Metrology of compound semiconductors for manufacturing power electronics
- Author(s)
- J. Grundmann, B. Bodemann - Physikalisch-Technische Bundesanstalt, Braunschweig (Germany), E. Ermilova, A. Hertwig - Bundesanstalt für Materialforschung und -prüfung, Berlin (Germany), P. Klapetek - Cesky Meteorologicky Institut (CMI), Brno (Czechia), S. Pereira, J. Rafighdoost - Delft University of Technology, Delft (Netherlands)
- Pages
- 233 - 234
- DOI
- 10.5162/SMSI2023/D5.2
- ISBN
- 978-3-9819376-8-8
- Price
- free
Abstract
The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force micros-copy. Each of these methods measures different properties of the defects and they all together con-tribute to a complete analysis.