3.3.5 - Microfluidic Integration of Interfacial Nanopores for Single-Molecule Sensing under FPGA-Based Closed-Loop Control

Event

EUROSENSORS 2026
2026-09-06 - 2026-09-09
Zurich

Band

Lectures

Chapter

Physical Sensors

Author(s)

L. Petrella, L. Dysli, J. Imfeld, J. N. Cronk, M. Aramesh - ETH Zürich,Zürich (Switzerland)

Pages

130 - 131

DOI

10.5162/eurosensors2026/3.3.5

ISBN

978-3-910600-12-6

Price

free

Abstract

In this paper, Gallium oxide (Ga 2 O 3 ) thin films are studied for their n-type semiconducting behavior and stability at high temperatures, making them suitable for hydrogen sensing. The resistivity of Ga 2 O 3 thin films is influenced by hydrogen concentration, which forms the basis for their use in hydrogen detection. Silver (Ag) doping and platinum (Pt) coating improve sensor performance, including response and recovery times. The films show strong hydrogen sensitivity at 400°C, with fast resistivity changes within seconds. Furthermore, Pt coated Ag doped Ga 2 O 3 thin films show promise as catalytically inactive hydrogen sensors, provided that appropriate temperature compensation is applied to ensure measurement stability.