P1.2 Compensation of siloxane poisoning of metal oxide semi-conductor gas sensors in temperature cycled operation
- SMSI 2020
(did not take place because of Covid-19 virus pandemic)
- SMSI 2020 - Sensors and Instrumentation
- P1 Chemical Sensors
- C. Schultealbert, T. Baur, T. Sauerwald, A. Schütze - Saarland University, Saarbrücken (Germany)
- 197 - 198
We present a method for quantifying the degradation state due to siloxane poisoning of a metal oxide semiconductor gas sensor using temperature cycled operation. The time constant for the generation of surface charge at high temperature increases through poisoning and is only slightly dependent on the gas atmosphere. In addition to indicating a necessary sensor replacement, this signal can also be used for drift compensation based on the exponential relation between sensor signal and this time constant.