B7.1 Highly Stable Pressure Sensors made of <110> Silicon
- SMSI 2021
2021-05-03 - 2021-05-06
- SMSI 2021 - Sensors and Instrumentation
- B7 Sensor Materials I
- T. Frank, R. Röder, S. Jagomast, H. Übensee, A. Cyriax, T. Ortlepp - Forschungsinstitut für Mikrosensorik GmbH, Erfurt (Germany)
- 145 - 146
A pressure sensor chip of <110> p-silicon is described. The piezoresistive measuring resistors run, in <110> direction. They have only a noticeable longitudinal effect. This is the first prerequisite for an ideal mirror-image arrangement of a measuring bridge. Thus it is possible to achieve an ideal symmetrical change in resistance due to the compressive load. These sensors were manufactured, the effectiveness is presented.